Repository logo
Institutional Repository
Communities & Collections
Browse
Quick Links
  • Central Library
  • Digital Library
  • BHU Website
  • BHU Theses @ Shodhganga
  • BHU IRINS
  • Login
  • English
  • العربية
  • বাংলা
  • Català
  • Čeština
  • Deutsch
  • Ελληνικά
  • Español
  • Suomi
  • Français
  • Gàidhlig
  • हिंदी
  • Magyar
  • Italiano
  • Қазақ
  • Latviešu
  • Nederlands
  • Polski
  • Português
  • Português do Brasil
  • Srpski (lat)
  • Српски
  • Svenska
  • Türkçe
  • Yкраї́нська
  • Tiếng Việt
Log In
New user? Click here to register.Have you forgotten your password?
  1. Home
  2. Browse by Author

Browsing by Author "Aniruddh Bahadur Yadav"

Filter results by typing the first few letters
Now showing 1 - 1 of 1
  • Results Per Page
  • Sort Options
  • Loading...
    Thumbnail Image
    PublicationArticle
    Effects of annealing temperature on the structural, optical, and electrical properties of ZnO thin films grown on n-Si〈100〉 substrates by the sol-gel spin coating method
    (Chinese Society for Metals, 2014) Aniruddh Bahadur Yadav; Amritanshu Pandey; S. Jit
    The effects of annealing temperature on the sol-gel-derived ZnO thin films deposited on n-S〈100〉 substrates by sol-gel spin coating method have been studied in this paper. The structural, optical, and electrical properties of ZnO thin films annealed at 450, 550, and 650 °C in the Ar gas atmosphere have been investigated in a systematic way. The XRD analysis shows a polycrystalline nature of the films at all three annealing temperatures. Further, the crystallite size is observed to be increased with the annealing temperature, whereas the positions of various peaks in the XRD spectra are found to be red-shifted with the temperature. The surface morphology studied through the scanning electron microscopy measurements shows a uniform distribution of ZnO nanoparticles over the entire Si substrates of enhanced grain sizes with the annealing temperature. Optical properties investigated by photoluminescence spectroscopy shows an optical band gap varying in the range of 3.28-3.15 eV as annealing temperature is increased from 450 to 650 °C, respectively. The four-point probe measurement shows a decrease in resistivity from 2.1 × 10 -2 to 8.1 × 10-4 ω cm with the increased temperature from 450 to 650 °C. The study could be useful for studying the sol-gel-derived ZnO thin film-based devices for various electronic, optoelectronic, and gas sensing applications. © 2014 The Chinese Society for Metals and Springer-Verlag Berlin Heidelberg.
An Initiative by BHU – Central Library
Powered by Dspace