Browsing by Author "Bhola Nath Pal"

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Efficient Photoinduced Charge Transfer between Linear Conjugated Polymer and Polymer Network for Light Harvesting Application
(American Chemical Society, 2025) Neelam Gupta; Anamika; Arpita Maurya; Sobhan Hazra; Bhola Nath Pal; Biplab Kumar Kuila
The development of light-harvesting systems based on a donor-acceptor heterostructure for efficient conversion of light to renewable energy is an emerging area of research. Here, we have demonstrated an efficient donor-acceptor heterostructure by hybridizing a high-band gap conjugated polymer network (CPN) with a linear conjugated polymer P3HT to boost charge separation and the light-harvesting property. Steady-state and time-resolved spectroscopic studies show efficient photoinduced electron transfer from P3HT to CPN and simultaneous hole transfer from CPN to P3HT due to the proper alignment of the band gap. The light-harvesting property of the hybrid materials was demonstrated by employing the hybrids as active layers for the fabrication of all polymer photodiodes which show photodetectivity from ultraviolet A to the entire visible region with high responsivity (0.85 A/W) and detectivity of 2.41 × 1011 Jones at 620 nm and −5 V in a CPN/P3HT blend of 1:1. The repetitive on-off switching of a photodetector at zero bias clearly indicates its ability to operate in self-biased mode. This result will open up more possibilities for designing a light-harvesting system based on a high-band gap conjugated polymer network that can utilize UV and visible regions of solar light. © 2025 American Chemical Society.
Enhancement in photo-response of CuZnS nanocrystals-based photodetector using asymmetric work function electrodes
(Elsevier B.V., 2024) Sandeep Dahiya; Sobhan Hazra; Utkarsh Pandey; Subarna Pramanik; Pardeep Dahiya; Satya Veer Singh; Nikita Kumari; Bhola Nath Pal
In this study, an efficient visible light photodetector has been fabricated by using heavy metal-free CuZnS Nanocrystals with average particle size of 13 ± 1 nm and has been synthesized by a microwave (MW) assisted synthesis technique. The optical band gap of this nanocrytstal is ∼1.7 eV and has an absorbance spectra ranging from 300 to700 nm. This low bandgap nanocrystals has been used to fabricate a photoconductor device with a CuZnS/ZnO bilayer structure. Besides, the device performance has been enhanced by using an asymmetric work-function lateral electrodes. The work-function difference between the electrodes gives a driven voltage between the electrodes, which allows faster collection of charge carriers from the device. As a consequence, a significant photocurrent is generated by the device even without any external bias. The self-biased (at 0 V) external quantum efficiency (EQE) of this device is ∼ 4 % (at 430 nm) whereas this value reaches ∼ 20 % under 2 V external bias. The device possesses the responsivity (Rλ) and detectivity (D) of 8.8 A/W and 3.8 × 1012 Jones at 320 nm respectively under 2 V external bias. © 2024 Elsevier B.V.
Enhancement of Photosensitivity in a Low-Operating-Voltage Organic-Inorganic Bilayer Thin-Film Transistor by Using an Asymmetric Source-Drain Electrode
(American Chemical Society, 2024) Pijush Kanti Aich; Zewdneh Genene; Utkarsh Pandey; Akhilesh Kumar Yadav; Ergang Wang; Bhola Nath Pal
A solution-processed inorganic-organic bilayer semiconductor channel-based red-light-sensitive thin-film transistor (TFT) has been fabricated by using an ion-conducting Li-Al2O3 gate dielectric that limits the operating voltage of this TFT within 2 V. In this device, a high-electron-mobility inorganic metal-oxide semiconductor (SnO2) was used as the primary charge transport layer, whereas the polymer (PIDT-2TPD) was used as the photoactive layer. To improve its red photosensitivity, an asymmetric work function source-drain (S-D) electrode was fabricated, which allows a selective carrier (electron or hole) injection and collection from the channel. Besides, the work function difference of this asymmetric S-D electrode generates a potential difference between electrodes that allows faster charge collection from the channel. As a consequence, the photosensitivity of this asymmetric S-D electrode TFT enhanced by ∼103 times under red illumination with respect to the symmetric S-D electrode TFT and the detectivity of this device increased ∼20 times. In addition, the on/off ratio of asymmetric TFT is 4 times greater than that of the symmetric TFT, whereas the subthreshold swing (SS) of this TFT is reduced from 200 to 144 mV/decade. © 2024 American Chemical Society.
Fabrication of a solution-processed low voltage TFT by using colloid 2D ZnO nanosheets and its application as a UV photodetector
(Royal Society of Chemistry, 2025) Abhik Bhuin; Akhilesh Kumar Yadav; Utkarsh S. Pandey; Debdyuti Mukherjee; Vivek Kumar Agrahari; Caroline Ponraj; Subha Sadhu; Bhola Nath Pal; Sujoy Sarkar
ZnO nanostructures have been extensively employed in optoelectronic devices because of their unique optoelectronic properties; however, these devices have been developed using physical vapor deposition techniques, which are costly and need a state-of-the-art fabrication facility. Hence, a solution-processed, cost-effective, low-temperature method is required for the large-scale fabrication of 2D material-based electronic devices. In this contribution, we report template, polymer, and surfactant-free wet chemical synthesis of 2D ZnO nanostructures having dimensions of ∼200 nm and thickness of ∼30 nm following the hydrothermal method. Detailed structural, morphological, and optical investigation revealed the formation of a pure hexagonal wurtzite phase of ZnO nanosheets. Utilizing the as-synthesized nanosheets, solution-processed thin film transistors (TFTs) are fabricated under low annealing temperatures that exhibit a high carrier mobility of 8.05 cm2 V−1 s−1 and an on-off ratio of ∼105. Also, these TFTs show high photosensitivity and can be used as UV detectors. Thus, our study highlights low-temperature facile fabrication of 2D ZnO TFTs, which may have promising applications in electronic displays, logic circuits, UV detectors, biosensors, and portable electronics. © 2025 The Royal Society of Chemistry.
Fabrication of Schottky Barrier Oxide Transistors to Reduce Subthreshold Swing Close to the Theoretical Limits
(John Wiley and Sons Inc, 2025) Utkarsh S. Pandey; Akhilesh Kumar Yadav; Pijush Kanti Aich; Rajarshi Chakraborty; Sandeep Dahiya; Bhola Nath Pal
The nature of the contact between the semiconductor channel and metal electrodes have a great influence on the functionality of a thin film transistor (TFT). A Schottky barrier of such contact can originate a ‘thermionic emission and thermionic field emission’ limited current transport that can reduce the sub-threshold swing of a TFT largely. This attribution has been dealt with using an asymmetric work-function source-drain (S-D) electrode of a low operating voltage TFT. Furthermore, the performance of the device can be optimized by incorporating a suitable interface layer with an optimal thickness in the asymmetric work-function S-D electrode configuration. In this study, a ZnO TFT has been fabricated by using a LiInSnO4 gate dielectric that reduces its operating voltage to 2 V due to the high areal capacitance of the ionic gate dielectric. In this TFT, LiF/Al serves as the source electrode, while MoO3/Ag works as the drain electrode with variable thickness of the MoO3 layer. Notably, by adjusting the thickness of the MoO3 layer within the MoO3/Ag electrode, the subthreshold swing of the TFT achieved 66 mV/decade, which is close to the theoretical limit of subthreshold swing for oxide TFTs. © 2025 Wiley-VCH GmbH.
Functionalized jute with high-water absorption, low thermal conductivity and efficient radiative cooling for the preservation of perishable green vegetables with reduced cold storage energy requirements
(Royal Society of Chemistry, 2024) Smruti B. Bhatt; Rahul Ranjan; Sandeep Dahiya; Bhola Nath Pal; Prodyut Dhar
Jute bags, traditionally used for storing fruits, vegetables and cereals, lack temperature resilience and catch fire, making the contents inside the bag vulnerable to deterioration. In this study, normal jute fibres (NJFs) were strategically modified via a delignification-cum-phosphorylation route to produce phosphorylated jute fibres (PJFs) using low-cost agro-based chemicals. PJFs exhibit a high water absorption capacity and a lower evaporation rate with prolonged moisture retention capabilities. Interestingly, PJFs also show an ultra-low thermal conductivity of 0.076-0.078 W m−1 K−1, slow rate of burning (0.058 cm s−1), high reflectance to light in the IR region (76%) and high thermal stability. PJF bags used for the storage of perishable vegetables, such as coriander leaves, show an extension in shelf life by ∼2 days, along with flame resistance to heat-sensitive vegetables such as chilies on exposure to high temperature. Life cycle assessment (LCA) shows that the production of PJFs generates 49.4% less global warming potential impact as compared to PET production with improved biodegradation within ∼21 days. Further, the utilization of PJFs reduced the time for cold storage of coriander leaves to 8 days, which led to reduced energy requirements and lowered environmental impacts by 11% in the terrestrial ecotoxicity and climate change category. The present study provides a strategic, scalable and green route for the production of functionalized jute bags required for the storage of perishable agricultural harvests, reducing global issues associated with food loss and improving human health and the economy. © 2024 The Royal Society of Chemistry.
Ingenious Fabrication of Ag-Filled Porous Anodic Alumina Films as Powerful SERS Substrates for Efficient Detection of Biological and Organic Molecules
(MDPI, 2022) Chih-Yi Liu; Rahul Ram; Rahim Bakash Kolaru; Anindya Sundar Jana; Annada Sankar Sadhu; Cheng-Shane Chu; Yi-Nan Lin; Bhola Nath Pal; Shih-Hsin Chang; Sajal Biring
Surface-enhanced Raman scattering (SERS) has been widely used to effectively detect various biological and organic molecules. This detection method needs analytes adsorbed onto a specific metal nanostructure, e.g., Ag-nanoparticles. A substrate containing such a structure (called SERS substrate) is user-friendly for people implementing the adsorption and subsequent SERS detection. Here, we report on powerful SERS substrates based on efficient fabrication of Ag-filled anodic aluminum oxide (AAO) films. The films contain many nanopores with small as-grown inter-pore gap of 15 nm. The substrates are created by electrochemically depositing silver into nanopores without an additional pore widening process, which is usually needed for conventional two-step AAO fabrication. The created substrates contain well-separated Ag-nanoparticles with quite a small inter-particle gap and a high number density (2.5 × 1010 cm−2). We use one-step anodization together with omitting additional pore widening to improve the throughput of substrate fabrication. Such substrates provide a low concentration detection limit of 10−11 M and high SERS enhancement factor of 1 × 106 for rhodamine 6G (R6G). The effective detection of biological and organic molecules by the substrate is demonstrated with analytes of adenine, glucose, R6G, eosin Y, and methylene blue. These results allow us to take one step further toward the successful commercialization of AAO-based SERS substrates. © 2022 by the authors.
Lithography-free, fully-printed lithium phosphate-based humidity sensors on paper as zero-waste, sustainable electronic solution
(Institute of Electrical and Electronics Engineers Inc., 2025) Sushree Sangita Priyadarsini; Disha Bhattacharjee; Aditi Ghosh; Akhilesh Kumar Yadav; Bhola Nath Pal; Subho Dasgupta
Electronic waste management is becoming an increasing concern for the planet, especially because it is increasing at a staggering rate of twenty percent per year. Therefore, various green, reusable, sustainable, and decomposable electronic technologies are being sought after in recent times. Among these, biodegradable paper electronics have emerged as one of the most preferred and affordable solutions. Here, in this study, we demonstrate a flexible and biodegradable humidity sensor based on lithium phosphate with titanium carbide on a photo paper substrate using lithography-free, all-printing technology that combines screen printing and inkjet printing. The local acidic environment created by the addition of acetic acid to the inkjet-printable lithium phosphate ink helps in absorbing and desorbing humidity on the surface of the printed lithium phosphate film. The paper-based humidity sensor leverages excellent sensing performance for a wide range of relative humidity values, with a substantially low response time and recovery time when the relative humidity changes by an approximate amount of fifteen percent. This study paves the way for a new generation of environment-friendly, sustainable, flexible, inexpensive sensors to provide sustainable sensing solutions in various applications, such as agriculture, environment monitoring, healthcare, weather prediction, etc. © 2025 IEEE.
One-Step Room Temperature Synthesis of Printable Carbon Quantum Dots Ink for Visual Encryption and High-Performance Photodetector
(John Wiley and Sons Inc, 2024) Baishali Thakurta; Sobhan Hazra; Alapan Samanta; Adnan Nasir; Amresh Kumar Singh; Deepak Maurya; Bama Charan Mondal; Anupam Giri; Bhola Nath Pal; Monalisa Pal
Carbon quantum dots (CQDs) have emerged as promising materials for optoelectronic applications and have garnered much interest as potential competitors to conventional inorganic or hybrid semiconductor quantum dots because of carbon's intrinsic merits of high stability, low cost, and environment-friendliness. The ability of easy formulation of functional ink of CQDs is necessary for the development of industrial-scale, reliable, inexpensive printing/coating processes, for its full exploitation in the ever-growing class of applications in sensors, optoelectronics, and energy storage and conversion. Here a facile one-step room-temperature synthesis of printable, fluorescent CQD ink is demonstrated. The as-synthesized fluorescent CQD ink is used for invisible fingerprint stamps, printing of micro-patterns, and soft lithographic patterning with a resolution down to 1.5 µm. This functional CQD ink is also used to fabricate a high-performance CQD-ZnO heterojunction ultraviolet (UV) photodetector with a photo-responsivity of 3.85 A W−1, detectivity of 6.78 × 1010 Jones, and an external quantum efficiency (EQE) of 15.3%. The enhanced device performance can be attributed to CQD's high photocurrent generation efficiency and rational combination of the asymmetric electrode materials. This work enables a high-temperature stable CQD fluorescent ink synthesis method to fulfill the processing requirements of printing and soft lithographic patterning for visual encryption and optoelectronics. © 2024 Wiley-VCH GmbH.
Physical properties of Fe-doped CdS quantum dots: single dot rectifying diode application
(Royal Society of Chemistry, 2025) Piyali Maity; Ravi Ranjan Shenthil Kumar; Shambunath Jha; Dibyendyu D. Bhattacharyya; Sandip Chatterjee; Bhola Nath Pal; Anup Kumar Ghosh
The domain of single-molecule based electronic devices has grown remarkably over the past decade by utilizing nanotechnology to improve the efficiency of device fabrication. However, most of the single-molecule devices are based on organic materials. Compared with organic molecules, quantum dots (QDs) are excellent owing to their crystalline nature, environmental stability, narrow emission band and quantum yield with tunable electronic and optoelectronic properties. Here, CdS:Fe QDs were synthesized and analyzed to assess their structural, optical, and electronic properties, and subsequently, they were implemented in fabricating single-dot rectifying diodes. EXAFS revealed the average coordination number of the doped Fe element. The ITO/TiO2/CdS:Fe quantum dot heterostructure rectifying diodes were grown by spin coating and were characterized using scanning tunneling microscopy (STM) at room temperature. STM images revealed the distribution of QDs over the substrate, and the spectra revealed the improved rectification behavior with tunneling up to ∼1000×, revealing their excellent diode functionality. Threshold voltage tuning from 1.62 eV to 0.83 eV indicated the application of these diodes for tunable electronics with low power consumption. Thus, these results indicate the promising use of CdS:Fe QDs for optimized ambient atmosphere rectifying diode applications, opening the way for innovative electronic devices with improved performance and functionality. © 2025 RSC.
Piezopotential Gated Self-Biased Conducting Polymer-Based Flexible Transistor for Mechanical Energy Harvesting Device
(American Chemical Society, 2025) Utkarsh S. Pandey; Sandeep Dahiya; Rajarshi Chakraborty; Subarna Pramanik; Sobhan Hazra; Bhola Nath Pal
A self-biased thin-film transistor (TFT) has been fabricated by using poly(3, 4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT: PSS) as a conducting channel that works as an efficient mechanical energy harvesting device. The self-biasing of this top-gated TFT has been accomplished through the integration of two voltage sources within the device structure, which are essential for its operation. The LiF/Al and MoO3/Ag electrodes serve as the source and drain, respectively, of this TFT that has a work-function difference of ∼−1.16 eV, which works as the drain bias (VD). The poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) thin film that has been employed as a gate dielectric generates a piezo-potential due to the application of external pressure and works as gate bias (VG) of this TFT. The unique feature of this device is its prolonged electrical power generation in DC form during the application of mechanical force that enables us to measure its mechanical-to-electrical power conversion energy accurately. The extracted power conversion efficiencies of hard and flexible (flat) substrate-based TFTs are 0.4 and 1.9%, respectively. Interestingly, the conversion efficiency of a flexible TFT increases with bending and can reach up to 33% which is unusually high for a mechanical energy harvesting device. In addition, electrical characterization of these devices shows transistor-like behavior with an On-Off ratio and subthreshold swing of 2 × 102 and 5.88 N/decade, respectively, for hard substrate, while on a flexible substrate, these values are 1 × 104 and 1.35 N/decade, respectively. © 2025 American Chemical Society.
Role of ultrathin Ti3C2Tx MXene layer for developing solution-processed high-performance low voltage metal oxide transistors
(American Institute of Physics, 2024) Ankita Rawat; Utkarsh Pandey; Ritesh Kumar Chourasia; Gaurav Rajput; Bhola Nath Pal; Nitesh K. Chourasia; Pawan Kumar Kulriya
Metal oxide transistors have garnered substantial attention for their potential in low-power electronics, yet challenges remain in achieving both high performance and low operating voltages through solution-based fabrication methods. Optimizing interfacial engineering at the dielectric/semiconductor interface is of utmost importance in the fabrication of high-performance thin film transistors (TFTs). In the present article, a bilayer Ti3C2Tx-MXene/SnO2-semiconductor (Tx stands for surface termination) configuration is used to fabricate a high-performance n-type thin film transistor by using an ion-conducting Li-Al2O3 gate dielectric on a p+-Si substrate, where electrical charges are formed and modulated at the Li-Al2O3/SnO2 interface, and Ti3C2Tx-MXene nanosheets serve as the primary electrical charge channel due to their long lateral size and high mobility. A comparative characterization of two distinct TFTs is conducted, one featuring Ti3C2Tx MXene and SnO2 semiconductor layer and the other with SnO2 only. Notably, the TFT with the Ti3C2Tx MXene layer has shown a significant boost in the carrier mobility (10.6 cm2/V s), leading to remarkable improvements in the on/off ratio (1.3 × 105) and subthreshold swing (194 mV/decade), whereas the SnO2 TFT without the Ti3C2Tx MXene layer shows a mobility of 1.17 cm2/V s with 8.1 × 102 on/off ratio and 387 mV/decade subthreshold swing. This investigation provides a possible way toward the development of high-performance, low-voltage TFT fabrication with the MXene/semiconductor combination. © 2024 Author(s).
Self-biased silicon transistor with a piezoelectric gate for an efficient mechanical energy harvesting device
(Royal Society of Chemistry, 2025) Utkarsh S. Pandey; Nila Pal; Sandeep Dahiya; Sobhan Hazra; Bhola Nath Pal
In this study, a piezo potential gated self-biased transistor was fabricated on a heavily doped silicon (p+-Si) (111) substrate and used for efficient mechanical energy harvesting applications. The drain and source (S-D) electrode of this top gated transistor was made of LiF(5 nm)/Al(65 nm) and MoO3(5 nm)/Ag(65 nm), respectively, whereas piezoelectric poly (vinylidene fluoride-co-hexapropelene) (PVDF-HFP) thin film was used as the gate dielectric. Drain bias (VDS), which was required to transport the hole carrier through the channel, was developed from the work function difference of the S-D electrodes, whereas the piezopotential, which worked as the gate bias of this transistor, was developed from the external force applied on the PVDF-HFP thin film. Consequently, this device efficiently converted mechanical energy into electrical energy. For an applied pressure of 4 bar for ∼5 s, the extracted electrical power per cycle of this device was 1.6 × 10−9 watts with a conversion efficiency of ∼75%, which was an exceptionally high value compared with conventional energy harvesting devices. Besides, the electrical characterization showed its transistor-like behavior, and the extracted device parameters, including threshold force, on-off ratio, and subthreshold swing (SS), were 0.5 N, 4.56 × 102, and 3.16 N A−1, respectively. © 2025 The Royal Society of Chemistry.
Solution-Processed ZnO/V2O5Heterojunction Thin Films for UV Photodetectors
(American Chemical Society, 2025) Prateek Kumar Yadav; Sandeep Dahiya; Bhola Nath Pal; Amit Kumar Srivastava; Amritanshu Pandey; Sanjay Kumar Srivastava
This study delineates the fabrication and evaluation of a high-performing ultraviolet (UV) photodetector (PD) consisting of a ZnO/V2O5nanoparticle (NP) bilayer thin film deposited on a Si/SiO2substrate through spin coating. Various analytical techniques, such as X-ray diffraction, Raman spectroscopy, field emission scanning electron microscopy, and transmission electron microscopy, have been employed to investigate the structural features and surface morphology of the as-prepared samples. The V2O5NPs were prepared through a facile one-pot solvothermal process, while ZnO NPs were obtained through a rapid sol–gel method. V2O5NPs demonstrate extended absorption with significant absorption in the range of 240–450 nm and exhibit a relatively smaller band gap. The optoelectronic features of as-deposited thin films have primarily been studied through I–V characteristics under dark and UV light conditions with the same external bias of 2 V, and the photocurrent has been found to be 9.13 × 10–5A/cm2, which is ∼2.77 × 103times higher than the dark current. The obtained photocurrent-to-dark current ratio for the ZnO/V2O5device is nearly ∼1.37 × 102times higher than that of the ZnO-only device. Moreover, this bilayer UV PD exhibits a detectivity (D) of ∼3.1 × 1012Jones, a spectral responsivity (R) of ∼4 A/W, and an external quantum efficiency (EQE) of ∼16% under an external potential of 10 V. Furthermore, the findings are analyzed, and an explanation of the detailed photodetection mechanism is outlined in this paper. © 2025 American Chemical Society
Structural, Optical, and Electronic Properties of NixCd1–xS Quantum Dots: Implications for Photodetection Applications
(American Chemical Society, 2025) Nikita Kumari; Sandeep Dahiya; Chetna Gautam; Piyali Maity; Sandip Chatterjee; Bhola Nath Pal; Anup Kumar Ghosh
X-ray diffraction (XRD) and transmission electron microscopy (TEM) have been used to study the structural and morphological characteristics of pure and Ni-doped CdS (CdS:Nix) (x = 0–6 atomic %) QDs synthesized via the hydrothermal method. Inductively coupled plasma mass spectrometry (ICP-MS) and EDS measurements have been carried out for quantifying the elemental composition. Due to Ni-doping, the short-range structural disorder causes a significant variation in the intensity of the longitudinal optical (LO) modes of Raman spectra. Optical absorption has been broadened with Ni doping, resulting in a reduction of the band gap from 2.42 eV (for CdS) to 2.36 eV (for CdS:Ni6). Photoluminescence (PL) spectra show various peaks associated with surface defects, near band emission (NBE), sulfur vacancies, photoinduced charge carrier separation, and recombination processes. To investigate the chemical states and valence band spectra of Ni-doped CdS QDs, X-ray photoemission spectroscopy (XPS) has been utilized. To realize their applicability in electronic devices, bilayer heterostructure photodetectors (PDs) have been fabricated on the glass substrate by using CdS:Nix QDs and sol–gel-derived SnO2(as a charge transport layer), viz., Glass/SnO2/CdS:Nix QD PDs. The performance of the device has been improved with a Ni-doping concentration in CdS QDs. The optimized device has been achieved with high photocurrent (28.2 mA/cm2), high figure-of-merit performance having a responsivity of 2.23 A/W, and detectivity of 2.1 × 1013Jones at a wavelength of approximately 450 nm under 5 V external bias for CdS:Ni6 QD heterostructure PD. Furthermore, this PD shows good response kinetics and are quite stable over time indicating its operational stability. © 2025 American Chemical Society
Synthesis of ZnO Quantum Dots and Their Applications in UV-Sensitive Low-Voltage Phototransistors
(American Chemical Society, 2025) Utkarsh S. Pandey; Sakhi Tiwari; Rajarshi Chakraborty; Sudip Kumar Batabyal; Bhola Nath Pal
ZnO quantum dots have been synthesized through a low-cost solution process with less complexity. The solution-processed quantum dots (QDs) demonstrate excellent stability and dispersion with an average crystallite size of ∼4.1 nm, which has been determined through the transmission electron microscopy and X-ray diffraction pattern. Furthermore, these ZnO QDs have also been utilized as a semiconductor channel in a solution-processed low-voltage (≤2 V) thin-film transistor (TFT) where ion-conducting LiInSnO4 thin film has been used as a gate dielectric. The fabricated ZnO QD-based TFT showcases saturation mobility (μsat), on/off ratio, and a subthreshold swing (SS) of 0.6 cm2/V sec, 104, and 166 mV/decade under dark conditions. Besides, using asymmetric work function source and drain electrodes, the on/off ratio and SS of the devices have been improved that effectively improves the UV sensitivity of the device. Under 1 W m-2 UV illumination, this asymmetric source-drain electrode TFT exhibits impressive UV photosensitivity with an external quantum efficiency of ∼25% which is comparably high for an UV phototransistor device. © 2025 American Chemical Society.