Browsing by Author "Joseph R. Nasr"

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Study on the Growth Parameters and the Electrical and Optical Behaviors of 2D Tungsten Disulfide
(American Chemical Society, 2020) Vijay K. Singh; Rahul Pendurthi; Joseph R. Nasr; Hitesh Mamgain; Radhey Shyam Tiwari; Saptarshi Das; Anchal Srivastava
Transition-metal dichalcogenides (TMDCs) with atomic thickness are promising materials for next-generation electronic and optoelectronic devices. Herein, we report uniform growth of triangular-shaped (∼40 μm) monolayer WS2 using the atmospheric-pressure chemical vapor deposition (APCVD) technique in a hydrogen-free environment. We have studied the optical and electrical behaviors of as-grown WS2 samples. The absorption spectrum of monolayer WS2 shows two intense excitonic absorption peaks, namely, A (∼630 nm) and B (∼530 nm), due to the direct gap transitions at the K point. Photoluminescence (PL) and fluorescence studies reveal that under the exposure of green light, monolayer WS2 gives very strong red emission at ∼663 nm. This corresponds to the direct band gap and strong excitonic effect in monolayer WS2. Furthermore, the efficacy of the synthesized WS2 crystals for electronic devices is also checked by fabricating field-effect transistors (FETs). FET devices exhibit an electron mobility of μ ∼6 cm2 V-1 s-1, current ON/OFF ratio of ∼106, and subthreshold swing (SS) of ∼641 mV decade-1, which are comparable to those of the exfoliated monolayer WS2 FETs. These findings suggest that our APCVD-grown WS2 has the potential to be used for next-generation nanoelectronic and optoelectronic applications. Copyright © 2020 American Chemical Society.
Unveiling the electrical and photo-physical properties of intrinsic n-type 2D WSe2for high performance field-effect transistors
(American Institute of Physics Inc., 2022) Suyash Rai; Vijay K. Singh; Rahul Pendurthi; Joseph R. Nasr; Saptarshi Das; Anchal Srivastava
Atomically thin semiconducting 2D transition metal dichalcogenides have garnered remarkable attention from the scientific community due to their prodigious contributions in the field of next-generation electronic and optoelectronic devices. In this continuation, we report a facile synthesis protocol of monolayer WSe2 films via the atmospheric-pressure chemical vapor deposition (APCVD) technique using hydrothermally synthesized hexagonal-phase tungsten oxide (h-WO3) nanorods. The as synthesized WSe2 crystal is a monolayer of ∼0.9 nm thickness as confirmed by atomic force microscopy. The confocal Raman and photoluminescence (PL) mapping suggests that the grown monolayer WSe2 triangles have lattice defects at edge sites, with a slight red-shift of ∼2 nm in PL, a blue-shift of ∼2 cm-1 in Raman peak and reduction in both the intensities. Confocal time-resolved PL mapping at edges reveals a fast-decay component of ∼582 ps and a slow-decay component of ∼2.18 ns that also signifies the presence of lattice defects, which serves as localized-states for photon-generated charge excitons. Furthermore, we have also investigated its electrical property by devising field-effect transistors (FETs). The fabricated WSe2 based FET shows intrinsic n-type behavior. WSe2 FET offers an electron mobility (μ) of ∼13.2 cm2 V-1 s-1, current ON/OFF ratio of ∼107 with a subthreshold slope (SS) of ∼397 mV/decade, which is relatable to the other reported works on WSe2 based FETs. In addition, the device exhibits very high on-current of order of ∼150 μA/μm. These results indicate that h-WO3 nanorod assisted APCVD synthesized WSe2 has prospective of being a competitor for next-generation optoelectronic, and valley-tronic devices. © 2022 Author(s).