Studies on hydrogenated Pd/p-type Si diodes

Abstract

The effect of hydrogen on the Pd/p-type Si diode has been studied through capacitance and i.r. absorption measurements. For hydrogenation, the device was kept in an H2-atomosphere at ∼1 atm with the possibility that hydrogen would reach interface and bulk through the hydrogen storage property of Pd. The capacitance studies show that the hydrogenation results in passivation with the reduction of the free carrier concentration, deep bulk and interface states. The i.r. spectrum after hydrogenation shows the growth of the peaks related to the silicon-hydrogen-boron (SiHB) bonds and different modes of silicon-hydrogen (SiHx) bonds in the Si lattice. © 1992.