Role of local temperature rise in stress channel production due to ≥350 keV proton implantation on Mylar surface

Abstract

The production of radial stress channels in the unimplanted zone but along the boundary of the circular beam spot of Mylar surface implanted at H + ion energy >or=350 keV has been explained on the basis of severe local temperature rise due to beam heating. On account of this temperature rise the irradiated zone melts and the radial channels are generated due to radial compressive stress along the boundary on cooling. The sharp decrease in the critical dose for the onset of blistering with a beam energy is attributed to the increase in gaseous diffusivity of evolved gases with local temperature rise which results in a faster coalescence of gas and earlier blistering.