Electro-deposited gallium arsenide film: I. Preparation, structural, optical and electrical studies

Abstract

The preparation of GaAs films using an electro-co-deposition technique' is described. An aqueous solution containing Ga and As ions in proper ratios was electrolysed at low currents. The deposited material was identified and characterised by EDAX and electron microscopic studies. Optical absorption study shows that the band gap of the deposited material is approximately 1./5 eV. The resistivity and trap density of electro-deposited film are approximately 103 Omega cm and approximately 1014 cm-3 respectively as determined by I-V characteristics.