High energy heavy ion irradiation in semiconductors

Abstract

Pd/n-Si and Pd/n-GaAs devices have been irradiated from high energy (approximately 100 MeV) heavy ions of Au7+ (gold) and Si7+ (silicon) to study the irradiation effects in these junction devices on semiconductor substrates. The devices have been characterized from I-V and C-V studies for electronic flow characterization. It has been found that the devices become high resistive on the irradiation and the substrates change the conductivity type from n- to p- on the irradiation of fluence of approximately 1012-1013 ions/cm2. The change in conductivity type has been understood as a result of creation of deep acceptors on the irradiation.