Electrodeposited semiconducting CuInSe2 films. I. Preparation, structural and electrical characterisation

Abstract

Ternary compound semiconductor CuInSe2 film has been deposited cathodically under galvanostatic conditions from an aqueous solution containing CuCl2, InCl3 and SeO2. The deposition parameters have been optimised for electrodeposition of CuInSe2. Structural characterisation of the deposited film has been carried out using EDAX and EM studies. Optical absorption study shows that the band gap of the deposited material is 1.08 eV. The resistivity and trap density of the electrodeposited film are respectively approximately 103 ohm cm and approximately 1014 cm-3 as determined by I-V characteristics.