Title: Growth and characterization of single crystals in the series ZrSxSe2-x
| dc.contributor.author | K.S. Bartwal | |
| dc.contributor.author | O.N. Srivastava | |
| dc.date.accessioned | 2026-02-09T09:13:05Z | |
| dc.date.issued | 1995 | |
| dc.description.abstract | Single crystals of transition metal dichalcogenide layered compounds with composition ZrSxSe2-x, where x varies within the range 0-2, were grown by the chemical vapour transport technique using iodine as a transporting agent. These binary solid solution crystals are found to be isomorphous over the whole range of composition. The growth conditions and lattice parameters were determined. X-ray diffraction was employed to determine accurate lattice parameters. © 1995. | |
| dc.identifier.doi | 10.1016/0921-5107(94)01187-7 | |
| dc.identifier.issn | 9215107 | |
| dc.identifier.uri | https://doi.org/10.1016/0921-5107(94)01187-7 | |
| dc.identifier.uri | https://dl.bhu.ac.in/bhuir/handle/123456789/53470 | |
| dc.subject | Chalisgenides | |
| dc.subject | Diffraction | |
| dc.subject | EDAX | |
| dc.subject | Layer structure | |
| dc.title | Growth and characterization of single crystals in the series ZrSxSe2-x | |
| dc.type | Publication | |
| dspace.entity.type | Article |