Title:
Nanopetal-Assembled SnS Flower-Based Vis-NIR Photodetector

dc.contributor.authorPrashant Kumar Gupta
dc.contributor.authorYashwant Puri Goswami
dc.contributor.authorAmritanshu Pandey
dc.date.accessioned2026-02-09T04:26:52Z
dc.date.issued2024
dc.description.abstractThis paper reports a simple, low-cost, and high-performance two-dimensional (2D) nanopetal-assembled three-dimensional (3D) SnS flowers/Si heterojunction-based visible-near-infrared (vis-NIR) photodetector (PD). A modified chemical bath deposition (CBD) method was used to grow a uniform and closely spaced array of SnS flowers on a Si substrate. This type of nanostructure offers a large photoactive area, thus generating a large number of carriers. The high-performance parameters of the fabricated PD (responsivity, 68.21 A/W; external quantum efficiency (EQE), 1.32 × 104%; detectivity, 6.87 × 1013 Jones; rise time, 193.91 ms; and fall time, 94.19 ms at 635 nm) are attributed to the heterojunction characteristics resulting from closely spaced nanopetal-assembled SnS flowers on silicon. © 2024 American Chemical Society.
dc.identifier.doi10.1021/acsaelm.4c01133
dc.identifier.issn26376113
dc.identifier.urihttps://doi.org/10.1021/acsaelm.4c01133
dc.identifier.urihttps://dl.bhu.ac.in/bhuir/handle/123456789/47222
dc.publisherAmerican Chemical Society
dc.subject2D nanopetals
dc.subject3D SnS flowers
dc.subjectheterojunction
dc.subjectphotodetector
dc.subjectvis−NIR
dc.titleNanopetal-Assembled SnS Flower-Based Vis-NIR Photodetector
dc.typePublication
dspace.entity.typeArticle

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