Emergence of Dielectric Properties by Doping of Semi-Transition Metal in Semiconductor Complex Perovskite Oxide

Abstract

The effect of zinc substitution at the Cu2+ site and germanium substitution at the Ti4+ site in bismuth copper titanate, Bi2/3Cu3Ti4O12, is investigated. Composition with x = 0.05 is synthesized by semi-wet route in the system Bi2/3Cu3Ti4−xGexO12 (BCTGO) and Bi2/3Cu3−xZnxTi4−xGexO12 (BCZTGO) that are sintered at 1123 K for 8 h. Crystal structure has remained cubic. The phase formations of these ceramics are confirmed by the X-ray diffraction. The microstructural analysis of the samples is done by scanning electron microscopy and tunneling electron microscopy. Elemental analysis is performed by energy dispersive X-ray spectroscopy. X-ray photoelectron spectroscopy suggests that all elements present in these ceramics are in proper oxidation states. The dielectric constant is found high for BCTGO-0.05 ceramic. The specific capacitances of BCTGO-0.05 and BCZTGO-0.05 are found to be 13.05 and 15.7 F g−1, respectively. Optical band gap values (Eg) of BCTGO-0.05 and BCZTGO-0.05 ceramics are found as 1.77 and 1.91 eV. © 2023 Wiley-VCH GmbH.