Dielectric behaviour of valence compensated system Ba1-xlaxSn1-xNxO3

Abstract

Compositions in the system Ba1-xLaxSn1-xNixO3 up to x ≤ 0.30 were prepared by solid state sintering, and the dielectric behaviour of single phase solid solutions studied. It has been found that solid solutions form for compositions with x ≤ 0.15, the structure remaining cubic, similar to BaSnO3. The grain size of all the sintered compositions was almost the same as that for BaSnO3, i.e. 2-3 μm. Dielectric relaxation in these materials is explained on the basis of the reorientation of dipoles due to hopping of electrons among Ni2+ and Ni3+ ions. © 2000 IoM Communications Ltd.