Title: Electrical properties of Se-Zn-In chalcogenide glasses
| dc.contributor.author | A.K. Singh | |
| dc.contributor.author | N. Mehta | |
| dc.contributor.author | K. Singha | |
| dc.date.accessioned | 2026-02-07T04:53:37Z | |
| dc.date.issued | 2009 | |
| dc.description.abstract | Electrical measurements of Se98XZn2InX (X = 0, 2, 4, 6 and 10) chalcogenide glasses have been carried out at room temperature. I-V characteristic of the present glasses were recorded upto 200 V.A drastic changes in I-V characteristic have been observed between 180 to 200 V for 4, 6, 10 at% of indium. The composition dependence of electrical conductivity is also discussed. © EDP Sciences. | |
| dc.identifier.doi | 10.1051/epjap/2009047 | |
| dc.identifier.issn | 12860050 | |
| dc.identifier.uri | https://doi.org/10.1051/epjap/2009047 | |
| dc.identifier.uri | https://dl.bhu.ac.in/bhuir/handle/123456789/20872 | |
| dc.title | Electrical properties of Se-Zn-In chalcogenide glasses | |
| dc.type | Publication | |
| dspace.entity.type | Article |