SOME STUDIES ON WO//3 THIN FILMS.

Abstract

Surface morphology of as-deposited and annealed WO//3 films have been studied using Scanning Electron Microscopy (SEM). Optical absorption studies of as-deposited and annealed films reveal that the band gap decreases upon annealing. Electrical measurements show that the film resistivity is of the order of 10**4 ohms cm. Relevant semiconductor parameters in contact with acidic H//2O electrolyte have been determined and the potentiality of WO//3 in photoelectrolysis solar cell has been demonstrated.