Contact potential difference measurement using a single-junction breakdown field method

Abstract

A technique for measuring contact potential differences using single-junction breakdown has been developed from evidence that recovery of a broken-down junction takes place after breakdown has occurred. Experiments have been performed with Al-Al2O3-metal thin film sandwiches. The aluminium oxide film was grown thermally on vacuum-deposited thin aluminium films. The present method appears to be superior to the usual two-junction breakdown method of Simmons. © 1975.