Title:
Correlation between changeover from weak antilocalization (WAL) to weak localization (WL) and positive to negative magnetoresistance in S-doped Bi1.5Sb0.5Te1.3Se1.7

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dc.contributor.authorMahima Singh
dc.contributor.authorLabanya Ghosh
dc.contributor.authorVinod K. Gangwar
dc.contributor.authorYogendra Kumar
dc.contributor.authorDebarati Pal
dc.contributor.authorP. Shahi
dc.contributor.authorShiv Kumar
dc.contributor.authorSudip Mukherjee
dc.contributor.authorK. Shimada
dc.contributor.authorSandip Chatterjee
dc.date.accessioned2026-02-07T11:00:34Z
dc.date.issued2022
dc.description.abstractThe magneto-transport and angle-resolved photoelectron spectroscopy (ARPES) of the S-doped Bi1.5Sb0.5Te1.3Se1.7 system have been investigated. Both the positive magnetoresistance (pMR) and negative magnetoresistance (nMR) under a perpendicular magnetic field as well as a changeover from weak antilocalization (WAL) to weak localization (WL) are observed. The interplay between pMR and nMR is elucidated in terms of the dephasing and spin-orbit scattering time scales. The topological surface state bands have been explored using ARPES. © 2022 Author(s).
dc.identifier.doi10.1063/5.0094556
dc.identifier.issn36951
dc.identifier.urihttps://doi.org/10.1063/5.0094556
dc.identifier.urihttps://dl.bhu.ac.in/bhuir/handle/123456789/41116
dc.publisherAmerican Institute of Physics Inc.
dc.titleCorrelation between changeover from weak antilocalization (WAL) to weak localization (WL) and positive to negative magnetoresistance in S-doped Bi1.5Sb0.5Te1.3Se1.7
dc.typePublication
dspace.entity.typeArticle

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