Chemical shift and donor-electron radius for lightly doped n-Ge

Abstract

Optimized values of the valley-orbit splitting 4Δ and the donor-electron radius a0 for the different Sb-, As-, and P-doped Ge samples are obtained from the analysis of the resonance scattering of phonons which play a dominant role in the phonon resistivity of these materials in the liquid-helium range. Both elastic and inelastic scatterings from the singlet and triplet states as well as phonon-assisted absorption processes are considered in the calculations for the entire resonance region. Excellent agreement between theory and experiment is obtained for the optimized values of a0 and 4Δ. © 1980 The American Physical Society.