Title:
Al/n-Si diodes with low energy (∼100 eV) hydrogen ion implantation prior to metallization

dc.contributor.authorP.C. Srivastava
dc.contributor.authorC. Colluza
dc.contributor.authorS. Chandra
dc.contributor.authorU.P. Singh
dc.date.accessioned2026-02-09T09:16:24Z
dc.date.issued1994
dc.description.abstract[No abstract available]
dc.identifier.doi10.1016/0038-1101(94)90021-3
dc.identifier.issn381101
dc.identifier.urihttps://doi.org/10.1016/0038-1101(94)90021-3
dc.identifier.urihttps://dl.bhu.ac.in/bhuir/handle/123456789/53902
dc.titleAl/n-Si diodes with low energy (∼100 eV) hydrogen ion implantation prior to metallization
dc.typePublication
dspace.entity.typeArticle

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