Deposition and study of AZO heterojunction Schottky diodes at different temperatures

Abstract

Highly transparent AZO (Al0.02Zn0.98O) films were deposited on p-type Si (100) using RF magnetron sputtering and then sintered at different temperatures (100 °C, 300 °C, 500 °C, and 600 °C). Structural properties of these films were analyzed and compared using XRD, SEM and AFM. Further, this work investigates the electrical properties of different types of Schottky junctions made with Gold metal contacts on these thin films. With the increasing fabrication temperature, both the optical band gap as well as the ideality factor were found to be decreasing. Impact of temperature variation on potential barrier of Schottky diodes and carrier concentration were also studied. © 2018, Springer Science+Business Media, LLC, part of Springer Nature.