Title:
Correlation between the density of defect states (DDS) and cross-linking of corner/edge sharing GeSe4 tetrahedral structural units

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dc.contributor.authorShiv Kumar Pal
dc.contributor.authorA. Dahshan
dc.contributor.authorNeeraj Mehta
dc.date.accessioned2026-02-07T11:25:55Z
dc.date.issued2023
dc.description.abstractWe have estimated the DDS in the STSG [Se78-xTe20Sn2Gex (x = 0, 2, 4, 6)] system by using the Correlated Barrier Hopping (CBH) model by performing A.C. conduction measurements in the frequency range (1 kHz–10 kHz) and temperature underneath the glass transition temperature (303–333) K. The detailed analysis reveals that bi-polaron hopping is a leading conduction mechanism over single-polaron hopping. Further, there is a noticeable reduction in DDS with increasing concentration of Ge beyond the composition x = 2. A close inspection indicates that cross-linking of Se with Ge has an important role in controlling the DDS in terms of the corner/edge sharing configurations in the structural unit of GeSe4 tetrahedral. © 2023
dc.identifier.doi10.1016/j.heliyon.2023.e21424
dc.identifier.issn24058440
dc.identifier.urihttps://doi.org/10.1016/j.heliyon.2023.e21424
dc.identifier.urihttps://dl.bhu.ac.in/bhuir/handle/123456789/44227
dc.publisherElsevier Ltd
dc.subjectA.C. conductivity
dc.subjectAmorphous materials
dc.subjectDefects
dc.subjectDensity of defect states
dc.subjectElectrical properties
dc.titleCorrelation between the density of defect states (DDS) and cross-linking of corner/edge sharing GeSe4 tetrahedral structural units
dc.typePublication
dspace.entity.typeArticle

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