Electrical breakdown in very thin Al2O3 films

Abstract

Electrical breakdown in very thin A12O3 films of thickness less than 100 Å and sandwiched between Al and Au metal electrodes has been studied experimentally. Recovery of high resistance of the oxide insulator film has been observed (after breakdown) on the application of either a reverse voltage or a high current pulse or just by resting the junction for a few hours after the removal of the applied external voltage. An explanation for the effect is suggested. The breakdown field is found to depend on the insulator thickness, the temperature and the nature of the electrode metals. On the basis of experimental results the mechanisms for electrical break down at room temperatures and above, in very thin Al2O3 films, can be attributed to electronic modified thermal breakdown. © 1975 Taylor & Francis Group, LLC.