Estimation of Mott parameters in amorphous Se80Te20 and Se80Te10M10 (Cd, In, Sb) alloys

Abstract

In the present communication, d.c. conductivity of a-Se80Te 20 and a-Se80Te10M10 (M = Cd, In, Sb) alloys has been studied in the temperature range 225-311 K in order to identify the conduction mechanism and to analyze the effect of different metallic additives on d.c. conduction in a-Se80Te20 alloy below the room temperature. An analysis of the experimental data confirms that conduction in low temperature region is due to variable range hopping in localized states near the Fermi level. The Mott parameters have been calculated in a-Se80Te20 and a-Se80Te10M 10 (M = Cd, In, Sb) alloys. The experimental data is found to fit well with Mott condition of variable range hopping conduction. Crown Copyright © 2011 Published by Elsevier Ltd. All rights reserved.