Acceptor states in Pd/n-GaAs devices and effect of hydrogenation

Abstract

Pd/n-GaAs devices have been fabricated and electrically characterized, before and after hydrogenation. The technique of hydrogenation is novel in the sense that the hydrogen absorbed in Pd provides a source of hydrogen at room temperature for its injection into GaAs by diffusion. The effective donor density decreases on hydrogenation. The forward bias C-V characteristics show the presence of two acceptor states at approximately 0.52 and approximately 0.72 eV for the unhydrogenated devices and at approximately 0.83 and approximately 0.92 eV for the hydrogenated devices. The likely origin of these states is discussed.