Lattice thermal conductivity of Si in the temperature range (2-1400) °k

Abstract

In the present paper we have determined the temperature dependence of the three-phonon relaxation rate, which is valid for the entire temperature range (2-1400)°K for Si and is expressed as τ3ph-1Tm(T)e-θαT The exponent m, which depends upon temperature, is determined with the help of Guthrie's expression as given in the Sharma-Dubey-Verma model. Using the SDV model we have calculated the lattice thermal conductivity of Si in the temperature range (2-1400)°K and found excellent agreement between experimental and calculated results. © 1973 The American Physical Society.