Baral, KamalakshaSingh, Prince KumarKumar, SanjaySingh, Ashish KumarJarwal, Deepak KumarJit, Satyabrata2025-01-272025-01-272022381101https://dl.bhu.ac.in/ir/handle/123456789/13538A unified 2-D continuous potential model for cylindrical nanowire junctionless accumulation mode (JAM) MOSFET and conventional inversion mode (IM) MOSFET has been presented in this manuscript. The 2-D Poisson's equation in cylindrical coordinates is solved analytically with the help of the superposition principle and evanescent mode analysis of the Fourier-Bessel series is performed. Both free and depletion charges are considered in the 2-D Poisson's equation. The model thus derived is continuous across different operation regimes (depletion and accumulation/inversion) with respect to VGS. Further, a threshold voltage model is also derived from the potential model and an expression of drain-induced barrier lowering (DIBL) is formulated. The short channel drain current model is derived from the potential-based charge model and quasi-ballistic transport velocity model. Furthermore, models for transconductance (gm) and output conductance (gd) is also formulated from the drain current model. A 3-D TCAD tool from CogendaTM has been used to numerically verify our proposed unified analytical model. � 2022 Elsevier LtdContinuous potential modelInversion mode mosfetJunctionless accumulation modeQuasi-ballistic modelSuperposition principleUnified modelArticlehttps://doi.org/10.1016/j.sse.2022.108282