Browsing by Author "Satyabrata Jit"

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2D Nanoscale Heterostructured Materials: Synthesis, Properties, and Applications
(Elsevier, 2020) Satyabrata Jit; Santanu Das
2D Nanoscale Heterostructured Materials: Synthesis, Properties, and Applications assesses the current status and future prospects for 2D materials other than graphene (e.g., BN nanosheets, MoS2, NbSe2, WS2, etc.) that have already been contemplated for both low-end and high-end technological applications. The book offers an overview of the different synthesis techniques for 2D materials and their heterostructures, with a detailed explanation of the many potential future applications. It provides an informed overview and fundamentals properties related to the 2D Transition metal dichalcogenide materials and their heterostructures. The book helps researchers to understand the progress of this field and points the way to future research in this area. © 2020 Elsevier Inc.
A unified 2-D model for nanowire junctionless accumulation and inversion mode MOSFET in quasi-ballistic regime
(Elsevier Ltd, 2022) Kamalaksha Baral; Prince Kumar Singh; Sanjay Kumar; Ashish Kumar Singh; Deepak Kumar Jarwal; Satyabrata Jit
A unified 2-D continuous potential model for cylindrical nanowire junctionless accumulation mode (JAM) MOSFET and conventional inversion mode (IM) MOSFET has been presented in this manuscript. The 2-D Poisson's equation in cylindrical coordinates is solved analytically with the help of the superposition principle and evanescent mode analysis of the Fourier-Bessel series is performed. Both free and depletion charges are considered in the 2-D Poisson's equation. The model thus derived is continuous across different operation regimes (depletion and accumulation/inversion) with respect to VGS. Further, a threshold voltage model is also derived from the potential model and an expression of drain-induced barrier lowering (DIBL) is formulated. The short channel drain current model is derived from the potential-based charge model and quasi-ballistic transport velocity model. Furthermore, models for transconductance (gm) and output conductance (gd) is also formulated from the drain current model. A 3-D TCAD tool from CogendaTM has been used to numerically verify our proposed unified analytical model. © 2022 Elsevier Ltd
Advances in microelectronics and photonics
(Nova Science Publishers, Inc., 2011) Satyabrata Jit
The tremendous growth and development in modern information and communication technology have been made possible due to the rapid advances in the fields of microelectronics and photonics. The area of microelectronics deals with the study and development of semiconductor-based electronic components and circuits of very small size starting from the micrometer to nanometer scale. This book examines and presents recent developments in the semiconductor devices for future generation microelectronics and photonics technologies. It includes some advanced CMOS device structures for future generation nanoscale IC technology, microdevices for pressure sensors, source and detectors for photonic applications and lithography process for nanoscale fabrication. © 2012 by Nova Science Publishers, Inc. All rights reserved.
Aluminium Oxide Thin-Film Based in Vitro Cell-Substrate Sensing Device for Monitoring Proliferation of Myoblast Cells
(Institute of Electrical and Electronics Engineers Inc., 2021) Uvanesh Kasiviswanathan; Chelladurai Karthikeyan Balavigneswaran; Chandan Kumar; Suruchi Poddar; Satyabrata Jit; Neeraj Sharma; Sanjeev Kumar Mahto
We demonstrate cell-substrate interaction on aluminium oxide thin-film in metal-insulator-metal structure followed by the change in dielectric characteristics of Al2O3 as a function of progression of cellular growth. The theoretical calculation of the fabricated biosensor reveals that the changes in the intrinsic elemental parameters are mainly attributed to the cell-induced behavioural changes. © 2002-2011 IEEE.
Analytical modelling of the current (I )-voltage (V) characteristics of sub-micron gate-length ion-implanted GaAs MESFETs under dark and illuminated conditions
(2013) Shweta Tripathi; Satyabrata Jit
An analytical model for current (I )-voltage (V) characteristics of a short-channel ion-implanted GaAs MESFET has been presented for dark and illuminated conditions. For the sake of simplicity, the non-analytic (i.e. non-integral) Gaussian doping function commonly considered for the channel doping of an ion-implanted GaAs metal semiconductor field effect transistor (MESFET) has been replaced by an analytic Gaussian-like doping profile in the vertical direction. The device uses an indium-tin oxide-based Schottky gate through which an optical radiation of 0.87 μm wavelength is coupled from an external source into the device to modulate the I-V characteristics of the short-gate length GaAs MESFET. The coupled light generates electron-hole pairs in the active channel region below the gate and develops a photovoltage across the Schottky gate-channel junction and modulates the device characteristics. This study also includes the modelling of this photovoltaic effect by taking the short-gate length effects into consideration. The developed model includes the effects of doping profile and device parameters on the drain current of the short-channel ion-implanted GaAs MESFETs under dark and illuminated conditions of operations. The accuracy of the proposed model is extensively verified by comparing the theoretically predicted results with numerical simulation data obtained by using the commercially available ATLASTM device simulation software. © The Institution of Engineering and Technology 2013.
Circular resonator based two ports optical switch
(Optical Society of America (OSA), 2014) Ashutosh Kumar Dikshit; Subhashish Tiwari; Satyabrata Jit; Amritansu Pandey; Praveen Chandra Pandey
We propose a design of two ports resonator based optical switch. The power of the switch has been enhanced by employing the cavities in 2-D photonic crystal. Also, we obtained the peaks of different wavelength at different output port. © OSA 2014.
Design and Simulation of Triple Material Gate InAs/Si Heterojunction TFET on SEL-BOX Substrates: Temperature Impact Analysis
(Institute of Electrical and Electronics Engineers Inc., 2021) Ashish Kumar Singh; Manas Ranjan Tripathy; Rishibrind Kumar Upadhyay; Satyabrata Jit
In this study, we have reported TCAD assessment-based analyses of DC, RF/analog, and linearity/intermodulation distortions of a triple-material-gate (TMG) electrode-based InAs/Si hetero-junction (HJ) TFET on SEL-BOX substrate (STFET). The gate electrode consists of three different metals of work function value 4.2 eV, 4.5 eV, and 4.0 eV in a cascaded manner. The gate dielectric consists of HfO2/SiO2 in a vertically stacked form in the proposed TMG-HJ-STFET structure. The electrical parameters of the proposed STFET structure have been shown to be better than those of the double-material-gate (DMG) and single-material-gate (SMG) based HJ-STFET structures. Numbers of electrical performance parameters such as the electric field, ION, IOFF, ION/IOFF ratio, subthreshold swing (SS), transconductance (gm), parasitic capacitances, and transit frequency (fT) have been investigated for all three HJ-STFETs structures under study. Linearity/intermodulation distortion investigation has been done by analysing of some important linearity parameters such as gm2, VIP2, gm3, VIP3, IIP3, IMD3 and 1-dB compression point. In Addition, we have successfully checked the temperature variation impact on some electrical parameters of the proposed structure, TGM-HJ-STFET. © 2021 IEEE.
Device physics and device integration of two-dimensional heterostructures
(Elsevier, 2020) Chandan Kumar; Santanu Das; Satyabrata Jit
Heterostructures are widely used as a basic building block in the advanced semiconductor devices owing to their essential and attractive structural, interfacial, and electronic properties. In general, heterostructures have a comparatively better electrical and optical performance with respect to the layers of individual materials. The charge transport mechanism in the heterostructures depends on various parameters such as materials used, their band alignments, surface behavior, interfacial characteristics, the mobility of charge carriers, etc. Recently, the nanomaterials, especially two-dimensional (2D) materials based 2D heterostructures have attracted various optoelectronics applications due to their unique and interesting properties. In this context, the current chapter presents the developments in the 2D materials-based heterostructures and the physics of device based on 2D heterostructure materials. Depending on charge conduction and bandgap, 2D materials are categorized in semimetal, semiconductor, and insulator. Thus the 2D heterostructures are formed in a variety of combination, namely semimetal/semiconductor, semimetal/insulator, semiconductor/semiconductor, semiconductor/insulator, and several others. The characteristics of these different type of heterostructures have shown that the 2D heterostructure needs their device physics different from convention semiconductor device physics. This chapter elaborates the different 2D heterostructures along with their structural, physical, and electronic properties and the fundamental understanding of those 2D heterostructure based electronic devices. © 2020 Elsevier Inc.
Dielectric modulated TFET on SELBOX substrate as a label-free biosensor applications: analytical modeling study and sensitivity analysis
(Institute of Physics, 2024) Ashish Kumar Singh; Ramesh Kumar; Satyabrata Jit
The manuscript proposes a ferroelectric heterojunction TFET (BG-FE-HJ-STFET) on SELBOX substrates with a back gate to create an ultra-sensitive label-free biosensor with dielectric modulation for the detection of neutral and charged biomolecules. Within the proposed device, four cavities have been carved out for the biomolecules’ immobilization under the front and rear gate dielectrics. By using a ferroelectric (FE) material as a gate stack, the low gate voltage is increased to be more effective by causing a negative capacitance phenomenon. The response of the proposed biosensor to four impartial biomolecules with different dielectric constants: protein (k = 8), biotin (k = 2.63), 3-Aminopropyl-triethoxysilane (APTES) (k = 3.57), and streptavidin (k = 0.1) has been investigated. Deoxyribonucleic acid (DNA), a charged biomolecule, is also examined for the dielectric constant of k = 6 concerning both charge (negative and positive) densities. The device is simulated with the commercially available SILVACO ATLASTM TCAD tool. The performance analysis relies on several figures of merit (FOMs) such as DC/RF and sensitivity (including drain current, I ON /I OFF ratio, and subthreshold swing) for both neutral and charged biomolecules. The optimized cavity structure demonstrates a notable sensitivity in drain current (2.7 × 108) and a significant I ON /I OFF sensitivity (1.42 × 1011). One of the main problems with current biosensors is the difficulty and expense of production in the nanoscale realm. © 2024 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Effect of concentration on the photophysics of solution of [6,6]-phenyl C61 butyric acid methyl ester (PCBM) in chloroform
(Elsevier B.V., 2023) Hemlata Bisht; Abhinav Pratap Singh; Satyabrata Jit; Hirdyesh Mishra
The present paper describes a detailed study of the concentration-dependent photophysics of [6,6]-phenyl C61 butyric acid methyl ester (PCBM) in chloroform solution with the help of steady-state and time-domain fluorescence measurements. The absorption pattern of PCBM shows strong absorption band in the UV region and a weak band in the visible range. The absorption profile remains unaffected by the concentration, denying any possibility of ground-state complex formation. Corresponding to this absorption profile, PCBM shows dual-structured blue (anti-Kasha emission; ∼435 nm) and red (normal emission; ∼650 nm) emission bands. The blue emission band is the charge transfer band and its intensity first increases and then decreases with concentration. The emission intensity of the red band, corresponding to emission from the monomer unit, decreases with increasing concentration. While at higher concentrations of PCBM, a new emission band around 715 nm emerges, whose intensity increases with concentration showing the possibility of being excimer emission of PCBM. The monomeric unit shows a fluorescence decay time of 3.0 ns, and the excimer decay time obtained is around 1.4 ns, while the charge transfer band shows multi-exponential fluorescence decay profile. © 2023
Effect of Diffusion on Photo-Induced Excited-State Energy Transfer between Fluorescent Semiconducting Molecules: Tris-(8-hydroxyquinoline) Aluminum and 6,13-Bis (Triisopropylsilylethynyl) Pentacene
(American Chemical Society, 2021) Hemlata Bisht; Abhinav Pratap Singh; Satyabrata Jit; Sandeep Pokharia; Hirdyesh Mishra
In the present work, the effect of diffusion on photo-induced excitation energy transfer between fluorescent organic semiconducting molecules tris-(8-hydroxyquinoline) aluminum (AlQ3, n-type donor) and 6,13-bis (triisopropylsilylethynyl) pentacene (TIPS-P, p-type acceptor) at a concentration range of 10-4to 10-6M in chloroform solution was studied by steady-state and time-domain fluorescence measurements. The donor-donor interaction strength is significantly weaker than the donor-acceptor strength (the ratio of donor-donor to donor-acceptor interaction strengths is 1.55 × 103) in chloroform solution. Considerable overlap between donor emission and acceptor absorption and high interaction parameters favors direct Förster energy transfer and exciplex (D*A) formation. Excitation energy migration does not take place between donor molecules. However, material diffusion appears to influence the donor decay dynamics by forming charge-transfer exciplex complexes and modulating the excitation energy transfer rate from the metal-to-ligand charge-transfer (MLCT) state of the donor to vibronic states of the acceptor at a low acceptor concentration. At high acceptor concentrations, energy transfer from the excited donor to acceptor occurs through the exchange mechanism along with Förster long-range dipole-dipole interactions, and the corresponding critical transfer distance is found to be ∼42 Å. A blue-shift in AlQ3emission, a red-shift in the 0-0 vibronic peak of TIPS-P, and quenching of exciplex decay following Stern-Volmer quenching are observed, with the increase in acceptor concentration. No evidence of excimer formation is observed in acceptor molecules. © 2021 American Chemical Society
Excitation Energy Transfer/Migration between Tris(8-hydroxyquinoline) Aluminum and Poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] in Chloroform
(American Chemical Society, 2020) Hemlata Bisht; Gopal Rawat; Satyabrata Jit; Hirdyesh Mishra
Excitation energy transfer/migration between fluorescent electron transport molecule tris(8-hydroxyquinoline) aluminum (donor) and fluorescent hole transport polymer poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (acceptor) were studied in chloroform solution at room temperature using steady-state and time-domain fluorescence measurements. The blend of this pair is widely used in the fabrication of organic light-emitting diode. The considerable overlap integral between the emission spectrum of donor and absorption spectrum of acceptor indicates high donor-acceptor interaction, and the effective enhancement of the acceptor fluorescence along with a decrease in fluorescence intensity of donor by exciting the donor states characterized the excitation energy transfer between them. Relatively faster decay of donor in the presence of a higher concentration of acceptor followed the Förster kind of long-range fluorescence resonance energy transfer, which is illustrated by the agreement in the values of the energy transfer parameters observed from the fluorescence decay analysis and the values calculated from the spectral overlap. However, at lower acceptor concentrations, the excitation energy migration and diffusion/intrachain interaction influence the kinetics, resulting in a significant difference in the observed and calculated value of the energy transfer parameters. The influence of intrachain and interchain interactions during nonradiative excitation energy transfer is confirmed by the donor and acceptor decay dynamics on increasing acceptor concentration in donor-acceptor solution. No evidence of excimer formation is noticed in the donor-acceptor solution. Copyright © 2020 American Chemical Society.
Excited-State Dynamics of Quinine Sulfate and Its Di-Cation Doped in Polyvinyl Alcohol Thin Films Near Silver Nanostructure Islands
(American Chemical Society, 2019) Swatantra Kumar Yadav; Gopal Rawat; Sandeep Pokharia; Satyabrata Jit; Hirdyesh Mishra
The present study demonstrates the near-field effect of silver nanostructure island films (SNIFs) on the photophysics and exited-state dynamics of quinine sulphate (QS) and its di-cation (QSD), doped in polyvinyl alcohol (PVA) films. The results indicate a nearly 3.8-fold enhancement in absorption and 4000-fold enhancement in fluorescence in SNIF-coated QS-doped PVA films, whereas only twofold enhancement in absorption and sevenfold enhancement in fluorescence intensity are found in SNIF-coated QSD-doped PVA films. However, an increase in photostability and a decrease in decay time have been observed in both the SNIF-coated films as compared to their uncoated forms. Further, a decrease in the magnitude of the edge excitation red shift in emission spectra along with a red shift in the L a band and a rise in the intensity of the L b band of excitation is observed in SNIF-coated QSD films because of strong coupling of the L b band with the surface plasmons of silver nanoparticles. Moreover, X-ray photoelectron spectroscopic measurement of silver nanoparticle-coated QS-PVA films shows no change in 3d 3/2 and 3d 5/2 transitions of silver, whereas the decrease in energy in these silver transitions in the QSD-PVA system is observed as compared to silver nanoparticle-coated PVA films. These results indicate the formation of a field-governed radiating plasmon and plasmon-coupled unified fluorophore system, respectively. This affects the photophysics of both of the molecules by plasmonic coupling of the Frank-Condon state, solvent relaxation state, and charge-transfer state by different orders of magnitude. Copyright © 2019 American Chemical Society.
Fabrication and Characterization of Directly Synthesized WSe2 Nano-flowers for NO2 Sensing
(Institute of Electrical and Electronics Engineers Inc., 2024) Shikha Singh; Jogendra Singh Rana; Satyabrata Jit
In this article, we report fabrication and characterization of tungsten diselenide (WSe2) nano-flowers for Nitrogen Dioxide (NO2) gas sensing. In this process, Tungsten diselenide (WSe2) nano-flowers were directly synthesized using solvothermal route on FTO coated glass substrate. The nanoflower structure of the directly synthesized film is depicted in FESEM image. The synthesized sample was characterized for its crystallinity and phase purity through X-ray Diffraction (XRD). Energy Dispersive X-ray (EDX) determined its elemental composition, and Field Emission-Scanning Electron Microscopy (FE-SEM) clearly confirmed its nanostructure and surface morphology. These directly synthesized WSe2 nanoflower structures are responsible for enhanced NO2 gas sensing. The fabricated device has shown 45.12% sensing response with 2 ppm gas exposure at -1 V bias (at 120 °C). The selectivity of the fabricated device has also been analyzed with ammonia, acetone, methanol and ethanol. © 2024 IEEE.
Förster Resonance Energy Transfer between Fluorescent Organic Semiconductors: Poly(9,9-dioctylfluorene- alt-benzothiadiazole) and 6,13-Bis(triisopropylsilylethynyl)pentacene
(American Chemical Society, 2022) Hemlata Bisht; Abhinav Pratap Singh; Hem Chandra Joshi; Satyabrata Jit; Hirdyesh Mishra
In the present study, an investigation of the electronic excitation energy transfer between two p-type fluorescent semiconductors, F8BT [poly(9,9-dioctylfluorene-alcohol-benzothiadiazole] and TIPS-P [6,13-bis(triisopropylsilylethynyl)pentacene], has been carried out in a chloroform solution using steady-state and time-domain fluorescence techniques. The spectral overlap integral between donor (F8BT) emission and acceptor (TIPS-P) absorption is 2.04 × 1015nm4/(M cm), and the corresponding critical transfer distance is 53.12 Å. In donor decay dynamics, at the lower acceptor concentrations, the observed results deviate from the Förster theory due to the combined effect of diffusion and energy migration. However, it does not exhibit energy migration and distribution for higher acceptor concentrations, and the system follows the Förster model of resonance excitation energy transfer (FRET). The higher value of the donor-acceptor interaction strength than self-interaction (donor-donor interaction) appears to be responsible for this behavior. Further, in acceptor decay, the appearance of the rise time and its decrease with the acceptor concentration confirms FRET from F8BT to TIPS-P. © 2022 American Chemical Society. All rights reserved.
GaSb/GaAs Type-II Heterojunction TFET on SELBOX Substrate for Dielectric Modulated Label-Free Biosensing Application
(Institute of Electrical and Electronics Engineers Inc., 2022) Ashish Kumar Singh; Manas Ranjan Tripathy; Kamalaksha Baral; Satyabrata Jit
A novel GaSb/GaAs type-II heterojunction TFET on SELBOX substrate (HJ-STFET)-based dielectric-modulated ultrasensitive label-free biosensor has been demonstrated in this article. The SELBOX substrate has been used in the proposed TFET-based sensor to reduce the lattice heat and improve the ION/IOFF ratio. Cavities in the gate oxide of the TFET are created to form dual-cavity (DC) HJ-STFET structure. These cavities contain the biomolecules to be sensed through the principle of gate-dielectric modulation. To validate the results, the analytical modeling of surface potential has been compared to simulated outcomes for different dielectric constant values of biomolecules. The threshold voltage sensitivity (SVT) and ION/IOFF sensitivity parameters of the proposed DC-HJ-STFET structure have been thoroughly investigated considering different biomolecules. The proposed DC-HJ-TFET structure is shown to have a higher current sensitivity (~6.67×1011) and threshold voltage sensitivity (0.37 V) values over some recently reported TFET-based biosensors. Finally, we have verified the drain and back gate biasing, as well as linearity fit verification, on the proposed biosensor's performance. © 1963-2012 IEEE.
Influence of phase change material properties on heat storage and discharge characteristics of latent heat thermal battery for solar thermal applications
(Springer Science and Business Media B.V., 2025) G. Raam Dheep; Yogesh Kumar Verma; Santosh Kumar Gupta; Satyabrata Jit
The present work focuses on analyzing the thermal reliability and corrosion properties of shell and tube heat exchanger system. In this work, Polyethylene Glycol 4000 is used as phase change material (PCM). PEG 4000 is subjected to accelerated thermal cycling tests to study the thermal reliability and corrosion properties of the PCM. The thermal reliability study of PEG 4000 shows that the change in melting temperature and latent heat of fusion after 1000 thermal cycles is − 1.66% and − 1.92%. Thermal performances such as charging and discharging properties of latent heat storage system incorporated with PEG 4000 PCM are also analyzed in the present work for different mass flow rates of a heat transfer fluid (HTF). Further, a shell and tube heat exchanger based latent heat storage system is developed to investigate the heat storage characteristics of PEG 4000. The temperature of HTF is maintained at 80 °C and 25 °C during charging and discharging of thermal energy. The thermal charging duration for different mass flow rates of HTF at 3, 4, and 5 kg min−1 were 45, 65, and 85 min, respectively. Similarly, during discharge the mass flow rate of HTF is maintained at 2 and 3 kg min−1. The thermal discharging duration for the corresponding mass flow rate is 20 and 15 min, respectively. The analysis reveals that the PEG 4000 is stable in terms of chemical, thermal, less corrosive and has good heat transfer characteristics. © Akadémiai Kiadó Zrt 2025.
n-UV-Converted Enhanced Downshifting Blue Emission through Bi3+ Sensitization in Self-Activated LaNbO4 Phosphors for LEDs and High Broadband Quantum Cutting Efficiency for Solar Cell Applications
(American Chemical Society, 2025) Sumit Modanwal; Abhishek Roy; Anita Rai; Kailash Narayan Uttam; Abhinav Pratap Singh; Satyabrata Jit; Hirdyesh Mishra; Shyam Bahadur Rai
This paper reports the downshifting (DS) and quantum cutting (QC) emissions in Bi3+-sensitized self-activated LaNbO4 and LaNbO4/Yb3+ phosphor materials. The Bi3+ and Yb3+ ion-doped/codoped phosphor materials were synthesized at 1473 K by a solid-state reaction method. The structural and optical characterization techniques have been carried out by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), photoluminescence (PL), and lifetime measurements. LaNbO4 gives intense blue emission in the 350-600 nm region, with the maximum in the violet-blue region at 418 nm on ultraviolet (UV) excitation. The PL emission intensity was found to increase on doping of the Bi3+ ion. It is found that at lower concentrations (≤0.08 mol %), Bi3+ behaves as a sensitizer; however, at higher concentrations (>0.5 mol %), it acts as an activator by producing its own emission due to 3P1 → 1S0 transition. The behavior of phosphors from low to high concentrations of Bi3+ has been investigated in detail by lifetime measurements and a suitable energy level diagram. The self-activated broad blue-emitting behavior of doped LaNbO4:10Yb3+, xBi3+ has been used to produce strong QC near-infrared (NIR) emission on UV excitation (262 nm) at 0.08 (i.e., as a sensitizer) and at 2 mol % (as an activator) Bi3+ concentrations. The maximum broadband QC efficiency is found to be 148% in the LaNbO4:0.08 Bi3+, 10Yb3+ phosphor at optimized Bi3+ and Yb3+ concentrations. We also investigated the QC emission at two distinct concentrations (0.08 and 2 mol %, i.e., sensitizer and activator, respectively) with varied Yb3+ concentrations from 0 to 13 mol % and compared with different other QC emitting phosphors. The LaNbO4 host and Bi3+ ions (3P1 level) both transfer energy to Yb3+ ions in two ways, and the two-step intense broadband quantum cutting would result in intense NIR emission. The NIR emission generated by this type of QC process can be used to enhance the efficiency of solar cells. The LaNbO4:Bi3+ phosphor emits intense DS emission with high color purity (88.8%) in the blue region and therefore has been employed to produce an n-UV-converted strong blue source for light-emitting diode (LED) application. © 2025 American Chemical Society.
Preface
(Elsevier, 2020) Satyabrata Jit; Santanu Das
[No abstract available]
Seamless 2D-MoS2/3D-Si heterojunctions for white light detection applications
(Institute of Physics, 2025) Santanu Das; J. S. Rana; Ummiya Qamar; Satyabrata Jit
In this study, we investigate the quality of junction formation and its impact on the electronic and optoelectronic properties of two-dimensional (2D) multilayered molybdenum disulfide (MoS2) films directly grown on three-dimensional (3D) p-type silicon (p-Si) (110) substrates. Large-area (15 mm × 15 mm), few-layer (8–10 layers) MoS2 films were synthesized using a facile vapor-phase transport method, achieving seamless integration with the underlying Si substrate. Comprehensive structural and morphological characterizations confirm the uniform growth of multilayer 2D-MoS2 and the formation of a well-defined 2D/3D MoS2/Si heterojunction interface. The vertical MoS2/Si heterostructure exhibits a maximum photocurrent of ∼2.131 × 10−6 A and a responsivity of ∼13.31 A W−1 under white light illumination of 20 µW cm−2 at a bias voltage of −3 V. These results highlight the critical role of engineered heterointerfaces in enhancing device performance, including improved adhesion and charge transport across the active layers. This work demonstrates the feasibility of integrating a variety of 2D materials, including 2D-MoS2, with silicon platforms for complementary metal oxide semiconductor (CMOS) compatible optoelectronic applications. The findings present promising opportunities for developing next-generation photosensors, photodetectors, p–n heterojunction diodes, and vertical junction transistors based on 2D/3D hybrid architectures. © 2025 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.