Comparative study of fabrication and characterization of Al-ZnO based Schottky barrier diodes using Pd and Au metal contacts

Abstract

This work shows a comparative study of two types of surface barrier diodes (SBDs). RF magnetron sputtering was used to fabricate Al doped ZnO films (Al0.02Zn0.98O) at two different temperatures (100 and 300 °C) and then the structural and optical properties of these thin films were obtained and analyzed using SEM, AFM, XRD, EDX and UV–Vis spectroscopy. Then the heterojunction layers Pd/Al-ZnO/p-Si (SBD1) & Au/Al-ZnO/p-Si (SBD2) were prepared using these Al-ZnO films (developed at both the temperatures). Optical and electrical properties and the effect of temperature on ideality factor, barrier potential and carrier concentration of both the SBDs were also studied. © 2019, Springer Science+Business Media, LLC, part of Springer Nature.