Deep states in hydrogenated Pd/Si diodes

Abstract

C-V characteristics of Pd/c-Si(n) diodes have been studied before and after hydrogenation. It has been found that there is a substantial deviation from theoretical calculations in the C-V plots in forward bias. It has been explained in terms of hydrogen-related acceptor-like states at 0.57 eV, spatially located at 0.15 mu m from the interface.