Title: Deep states in hydrogenated Pd/Si diodes
| dc.contributor.author | P.C. Srivastava | |
| dc.contributor.author | D. Tripathi | |
| dc.contributor.author | S. Chandra | |
| dc.date.accessioned | 2026-02-09T09:38:01Z | |
| dc.date.issued | 1988 | |
| dc.description.abstract | C-V characteristics of Pd/c-Si(n) diodes have been studied before and after hydrogenation. It has been found that there is a substantial deviation from theoretical calculations in the C-V plots in forward bias. It has been explained in terms of hydrogen-related acceptor-like states at 0.57 eV, spatially located at 0.15 mu m from the interface. | |
| dc.identifier.doi | 10.1088/0268-1242/3/10/010 | |
| dc.identifier.issn | 2681242 | |
| dc.identifier.uri | https://doi.org/10.1088/0268-1242/3/10/010 | |
| dc.identifier.uri | https://dl.bhu.ac.in/bhuir/handle/123456789/55799 | |
| dc.title | Deep states in hydrogenated Pd/Si diodes | |
| dc.type | Publication | |
| dspace.entity.type | Article |