Structure and growth of an unusual silicon carbide polytype 147R

Abstract

Most of the SiC polytypes known uptil now are found to be based on either of the basic structure 6H, 15R or 4H. A new polytype 147R with structure [(3332)432]3 has been discovered which is based on 33iî instead of either of the basic structures. In addition a small region of the same crystal is found to be a high-period polytype (588R or 196H) and is based on 147R. The implication of these observations regarding the growth mechanism of polytypic crystals has been discussed. © 1973, Walter de Gruyter. All rights reserved.