Title:
Structure and growth of an unusual silicon carbide polytype 147R

dc.contributor.authorU.S. Ram
dc.contributor.authorM. Dubey
dc.contributor.authorG. Singh
dc.date.accessioned2026-02-09T11:27:18Z
dc.date.issued1973
dc.description.abstractMost of the SiC polytypes known uptil now are found to be based on either of the basic structure 6H, 15R or 4H. A new polytype 147R with structure [(3332)432]3 has been discovered which is based on 33iî instead of either of the basic structures. In addition a small region of the same crystal is found to be a high-period polytype (588R or 196H) and is based on 147R. The implication of these observations regarding the growth mechanism of polytypic crystals has been discussed. © 1973, Walter de Gruyter. All rights reserved.
dc.identifier.doi10.1524/zkri.1973.137.5-6.341
dc.identifier.issn14337266
dc.identifier.urihttps://doi.org/10.1524/zkri.1973.137.5-6.341
dc.identifier.urihttps://dl.bhu.ac.in/bhuir/handle/123456789/60502
dc.titleStructure and growth of an unusual silicon carbide polytype 147R
dc.typePublication
dspace.entity.typeArticle

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