Fabrication and characteristics of Schottky diode based on composite organic semiconductors

Abstract

Schottky barrier diode based on composite of polyaniline with polystyrene has been fabricated and characterized using indium as Schottky contact and platinum as an ohmic contact. Current-voltage (I-V) plots were non-linear and capacitance-voltage (C-V) plots were almost linear in reverse bias indicating rectification behavior. Various junction parameters were calculated from the temperature dependent I-V and C-V data and discussed. These results indicate that the composite materials have better mechanical strength and diode quality compare to that of pure polymer. © 2004 Elsevier Ltd. All rights reserved.