Microcracks in ∼ 100 MeV Si7+-ion-irradiated p-silicon surfaces

Abstract

The p-silicon surfaces have been irradiated with ∼ 100 MeV Si 7+ions to a fluence of 2.2 × 1013 ions cm -2, and surface morphology has been studied with atomic force microscopy (AFM). Interesting features of cracks of ∼ 47 nm in depth and ∼ 103 nm in width on the irradiated surfaces have been observed. The observed features seemed to have been caused by the irradiation-induced stress in the irradiated regions of the target surface.