Study of MAX phase based Schottky interfacial structure: the case of electron-beam deposited epitaxial Cr2AlC film on p–Si (100)

Abstract

In recent times, due to their highly stable and radiation tolerant nature, interest toward feasibility of developing MAX phase-based applications has suddenly surged. In this context, we for the first time report a comprehensive spin-dependent transport study of Cr2AlC@p–Si-based thin film interfacial structure. Phase purity of the fabricated epitaxial Cr2AlC thin film grown by electron-beam deposition was confirmed from structural, vibrational and elemental analysis. Transport studies showed n-type metallic nature of the deposited Cr2AlC films. Low-temperature transport/magnetic measurements across the interface have shown spin-dependent Schottky behavior. Our results demonstrate the potential of Cr2AlC@p–Si as a novel Schottky interfacial structure for the development of more complex device applications. Graphical abstract: [Figure not available: see fulltext.] © 2023, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.