Growth, synthesis and characterization of large grain CuInSe2 in bulk and thin film form

Abstract

Growth of large grain form of CuInSe2 has been described and discussed. It has been shown that specific treatments such as Cd/Bi doping of the as-synthesized polycrystalline CuInSe2 bulk flux and localized annealing (∼600°C) of the as-deposited polycrystalline CuInSe2 thin films lead to large grain (bulk: 1000 μm, thin film: 10 μm) CuInSe2. © 1988.