X‐Ray Diffraction Effects from 2H Crystals Undergoing Transformation to the 3C Structure by the Layer Displacement Mechanism

Abstract

On annealing at elevated temperatures 2H silicon carbide crystals transform to a disordered twinned 3C structure. It is suggested that the transformation proceeds by nucleation and propagation of stacking faults causing layer‐displacement in the solid state. The theory of X‐ray diffraction for 2H crystals is developed undergoing transformation to the 3C phase by such a mechanism. The different diffraction effects such as peak breadth and peak broadening are predicted. Copyright © 1987 WILEY‐VCH Verlag GmbH & Co. KGaA