Browsing by Author "Baral, Kamalaksha"

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    A unified 2-D model for nanowire junctionless accumulation and inversion mode MOSFET in quasi-ballistic regime
    (Elsevier Ltd, 2022) Baral, Kamalaksha; Singh, Prince Kumar; Kumar, Sanjay; Singh, Ashish Kumar; Jarwal, Deepak Kumar; Jit, Satyabrata
    A unified 2-D continuous potential model for cylindrical nanowire junctionless accumulation mode (JAM) MOSFET and conventional inversion mode (IM) MOSFET has been presented in this manuscript. The 2-D Poisson's equation in cylindrical coordinates is solved analytically with the help of the superposition principle and evanescent mode analysis of the Fourier-Bessel series is performed. Both free and depletion charges are considered in the 2-D Poisson's equation. The model thus derived is continuous across different operation regimes (depletion and accumulation/inversion) with respect to VGS. Further, a threshold voltage model is also derived from the potential model and an expression of drain-induced barrier lowering (DIBL) is formulated. The short channel drain current model is derived from the potential-based charge model and quasi-ballistic transport velocity model. Furthermore, models for transconductance (gm) and output conductance (gd) is also formulated from the drain current model. A 3-D TCAD tool from CogendaTM has been used to numerically verify our proposed unified analytical model. � 2022 Elsevier Ltd
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    GaSb/GaAs Type-II Heterojunction TFET on SELBOX Substrate for Dielectric Modulated Label-Free Biosensing Application
    (Institute of Electrical and Electronics Engineers Inc., 2022) Singh, Ashish Kumar; Tripathy, Manas Ranjan; Baral, Kamalaksha; Jit, Satyabrata
    A novel GaSb/GaAs type-II heterojunction TFET on SELBOX substrate (HJ-STFET)-based dielectric-modulated ultrasensitive label-free biosensor has been demonstrated in this article. The SELBOX substrate has been used in the proposed TFET-based sensor to reduce the lattice heat and improve the ION/IOFF ratio. Cavities in the gate oxide of the TFET are created to form dual-cavity (DC) HJ-STFET structure. These cavities contain the biomolecules to be sensed through the principle of gate-dielectric modulation. To validate the results, the analytical modeling of surface potential has been compared to simulated outcomes for different dielectric constant values of biomolecules. The threshold voltage sensitivity (SVT) and ION/IOFF sensitivity parameters of the proposed DC-HJ-STFET structure have been thoroughly investigated considering different biomolecules. The proposed DC-HJ-TFET structure is shown to have a higher current sensitivity (~6.67�1011) and threshold voltage sensitivity (0.37 V) values over some recently reported TFET-based biosensors. Finally, we have verified the drain and back gate biasing, as well as linearity fit verification, on the proposed biosensor's performance. � 1963-2012 IEEE.