Browsing by Author "A. Roy Bardhan"
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PublicationArticle Contact potential difference measurement using a single-junction breakdown field method(1975) A. Roy Bardhan; P.C. Srivastava; D.L. BhattacharyaA technique for measuring contact potential differences using single-junction breakdown has been developed from evidence that recovery of a broken-down junction takes place after breakdown has occurred. Experiments have been performed with Al-Al2O3-metal thin film sandwiches. The aluminium oxide film was grown thermally on vacuum-deposited thin aluminium films. The present method appears to be superior to the usual two-junction breakdown method of Simmons. © 1975.PublicationArticle Electrical breakdown in very thin Al2O3 films(1975) A. Roy Bardhan; P.C. Srivastava; I.B. Bhattacharya; D.L. BhattacharyaElectrical breakdown in very thin A12O3 films of thickness less than 100 Å and sandwiched between Al and Au metal electrodes has been studied experimentally. Recovery of high resistance of the oxide insulator film has been observed (after breakdown) on the application of either a reverse voltage or a high current pulse or just by resting the junction for a few hours after the removal of the applied external voltage. An explanation for the effect is suggested. The breakdown field is found to depend on the insulator thickness, the temperature and the nature of the electrode metals. On the basis of experimental results the mechanisms for electrical break down at room temperatures and above, in very thin Al2O3 films, can be attributed to electronic modified thermal breakdown. © 1975 Taylor & Francis Group, LLC.PublicationArticle Electron transport mechanisms in very thin Al2O3 films(1976) A. Roy Bardhan; P.C. Srivastava; A. Chatterjee; D.L. BhattacharyaElectron transport mechanisms for current flow in very thin (about 50 Å) Al2O3 sandwiched film has been studied. At low voltages a tunnelling mechanism has been proposed and at higher voltages Scottky and space-charge mechanisms are reported. The mechanisms of conduction have been explained on the basis of different current voltage and current–temperature curves. © 1976 Taylor and Francis Group, LLC.PublicationArticle Negative resistance and bistable switching in very thin Al2O3 films(1974) A. Roy Bardhan; P.C. Srivastava; D.L. Bhattacharya[No abstract available]